Photoacoustic Measurements of the Thermal and Elastic Properties of n-Type Silicon Using Neural Networks
Sign Up to like & getrecommendations! Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00213-6
Abstract: In this paper, a simple multilayer perceptron neural network with forward signal propagation was designed and used to simultaneously determine the main physical parameters, such as: the thermal diffusivity, thermal expansion coefficient and thickness, from… read more here.
Keywords: neural networks; thermal elastic; photoacoustic measurements; silicon ... See more keywords
Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures
Sign Up to like & getrecommendations! Published in 2020 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2020.138222
Abstract: Abstract n-Type silicon (Si)/p-type boron (B)-doped ultrananocrystalline diamond (UNCD) heterojunctions were manufactured through coaxial arc plasma deposition, and were examined in terms of the diode parameters and ultraviolet (UV) photodetection at different temperatures. The structure… read more here.
Keywords: different temperatures; silicon type; diode parameters; parameters ultraviolet ... See more keywords
Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5012680
Abstract: The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be… read more here.
Keywords: phosphorus doped; light induced; phosphorus; induced degradation ... See more keywords
Plasmon-enhanced photodetectors fabricated using digital inkjet-printing on chemically nanopatterned silicon wafers
Sign Up to like & getrecommendations! Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0141682
Abstract: In this study, we have fabricated and characterized three different configurations of photodetectors with digital inkjet printing techniques on different types of silicon substrates, such as pristine n-type silicon and chemically nanostructured n-type silicon, with… read more here.
Keywords: type silicon; inkjet printing; silicon; digital inkjet ... See more keywords
1 × 4 optical demultiplexer of the second band in a hole-type silicon photonic crystal
Sign Up to like & getrecommendations! Published in 2021 at "Optical Engineering"
DOI: 10.1117/1.oe.60.10.107103
Abstract: Abstract. A 1 × 4 optical demultiplexer (OD) based on the self-collimation (SC) effect in hole-type silicon photonic crystal (PC) was proposed, and its performance was numerically demonstrated. The 1 × 4 OD consists of two cascaded Mach–Zehnder interferometers… read more here.
Keywords: optical demultiplexer; silicon photonic; hole type; type silicon ... See more keywords
The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals
Sign Up to like & getrecommendations! Published in 2017 at "Technical Physics Letters"
DOI: 10.1134/s1063785017120288
Abstract: Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the… read more here.
Keywords: type silicon; field electron; electron emission;