Optoelectronic properties and application of p-type ultrawide bandgap Zn0.7Ni0.3O1+δ thin films in p–n heterojunction diodes
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DOI: 10.1063/5.0238597
Abstract: p-type ultrawide bandgap oxide semiconductors play a crucial role in developing optoelectronic and electronic devices. Our previous studies have identified rock salt-structured Zn1−xNixO (∼0.27 ≤ x ≤ 1) alloys as promising wide bandgap oxides for achieving p-type… read more here.
Keywords: type ultrawide; ultrawide bandgap; heterojunction; 7ni0 3o1 ... See more keywords