Characterization of Etched and Grown GaN-GaN Schottky Diodes
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DOI: 10.1017/s1431927619011930
Abstract: GaN-based devices are of much current interest for high-power electronics due to their superior physical and electrical properties, which include high electric breakdown field, high operation temperature, large band gap, and high electron velocity. GaN… read more here.
Keywords: gan substrates; uid gan; microscopy; schottky diodes ... See more keywords