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Ultrahigh Hall mobility and suppressed backward scattering in layered semiconductor Bi2O2Se

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0 Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5042727

Abstract: We report on an ultrahigh Hall mobility exceeding 40 000 cm2/V s and a very long traditional scattering time in a trivial layered semiconductor Bi2O2Se. Shubnikov-de Haas (SdH) oscillations were observed in both the unsaturated longitudinal linear… read more here.

Keywords: ultrahigh hall; semiconductor bi2o2se; backward scattering;