Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
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DOI: 10.1007/s40820-022-00852-2
Abstract: The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the chemical vapor deposition system as the growth substrate. The field-effect transistor based on Te grown… read more here.
Keywords: mobility; growth; tellurium; ultrahigh hole ... See more keywords