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Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c02522
Abstract: Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been…
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Keywords:
using pulsed;
large area;
broadband;
ultralow noise ... See more keywords
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Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b13056
Abstract: In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously…
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Keywords:
gate dielectrics;
noise organic;
gate;
self assembled ... See more keywords
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Published in 2017 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2017.2729018
Abstract: A complete model describing both single- and dual-loop optoelectronic oscillators (OEO) is introduced. It is compared to several experimental configurations, with excellent agreement in all cases. The physical insight into noise coupling mechanisms brought by…
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Keywords:
single dual;
optoelectronic oscillators;
ultralow noise;
noise ... See more keywords
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Published in 2023 at "Optics letters"
DOI: 10.1364/ol.484028
Abstract: We report ultralow-noise transmission over a 102-km single-mode fiber using a purely nonlinear amplification scheme consisting of a second-order distributed Raman amplifier (DRA) and a phase-sensitive amplifier (PSA) based on periodically poled LiNbO3 waveguides. The…
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Keywords:
noise;
noise transmission;
ultralow noise;
psa ... See more keywords