Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
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DOI: 10.1063/5.0145286
Abstract: Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface… read more here.
Keywords: band; interfacial band; ald zro2; ultrathin ald ... See more keywords