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Published in 2024 at "Small"
DOI: 10.1002/smll.202409091
Abstract: Metal-assisted chemical etching (MACE), a wet-based anisotropic etching process for semiconductors, has emerged as an alternative to plasma-based etching. However, using noble metal catalysts in MACE limits the implementation of complementary metal-oxide-semiconductor (CMOS) processes. This…
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Keywords:
assisted chemical;
catalyst;
ultrathin catalyst;
metal assisted ... See more keywords