Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
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DOI: 10.1016/j.mee.2017.05.028
Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the… read more here.
Keywords: electron transport; transport; hzo; ultrathin ferroelectric ... See more keywords