Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing
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DOI: 10.1021/acsami.4c10002
Abstract: Nonvolatile memory devices based on ferroelectric HfxZr1–xO2 (HZO) show great promise for back-end integrable storage and for neuromorphic accelerators, but their adoption is held back by the inability to scale down the HZO thickness without… read more here.
Keywords: laser; back end; hzo; ultrathin hfo2 ... See more keywords