Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts
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DOI: 10.1063/1.4986098
Abstract: In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are… read more here.
Keywords: ultrathin strain; transistor based; effect; strain gated ... See more keywords