Research Activities of Extreme Ultraviolet Lithography at the University of Hyogo
Sign Up to like & getrecommendations! Published in 2019 at "Synchrotron Radiation News"
DOI: 10.1080/08940886.2019.1634435
Abstract: After more than three decades of development, extreme ultraviolet lithography (EUVL) [1] has become the next generation of technology to be used in the patterning of the most advanced semiconductor... read more here.
Keywords: ultraviolet lithography; research activities; activities extreme; extreme ultraviolet ... See more keywords
Anamorphic objective design for extreme ultraviolet lithography at the 5∼1 nm technology node.
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DOI: 10.1364/ao.428136
Abstract: Extreme ultraviolet lithography (EUVL) has been applied in integrated circuit manufacture at the 9-7 nm technology node, in which the numerical aperture (NA) of the objective is 0.33, and the reduction of the objective is… read more here.
Keywords: ultraviolet lithography; lithography; technology node; extreme ultraviolet ... See more keywords
Aberration analysis and compensate method of a BP neural network and sparrow search algorithm in deep ultraviolet lithography.
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DOI: 10.1364/ao.462436
Abstract: Mass production can be planned by utilizing the multiple patterning technology of 193 nm immersion scanners at the 7 nm technology node. In deep ultraviolet lithography, imaging performance is significantly affected by distortions of projection… read more here.
Keywords: aberration; optics; deep ultraviolet; method ... See more keywords
Automatic design of an extreme ultraviolet lithography objective system based on the Seidel aberration theory.
Sign Up to like & getrecommendations! Published in 2022 at "Applied optics"
DOI: 10.1364/ao.467761
Abstract: In this paper, a method is proposed to solve the initial optical structure of an off-axis multimirror system for an extreme ultraviolet lithography (EUVL) application. By tracing the characteristic rays, the primary aberration can be… read more here.
Keywords: system; aberration; extreme ultraviolet; seidel aberration ... See more keywords
Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography.
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DOI: 10.1364/ao.479619
Abstract: The critical dimension (CD), roughness, and sensitivity are extremely significant indicators for evaluating the imaging performance of photoresists in extreme ultraviolet lithography. As the CD gradually shrinks, tighter indicator control is required for high fidelity… read more here.
Keywords: extreme ultraviolet; contact; ultraviolet lithography; process ... See more keywords