Articles with "ultraviolet photodetectors" as a keyword



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Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

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Published in 2017 at "Small"

DOI: 10.1002/smll.201604197

Abstract: A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by… read more here.

Keywords: graphene; flexible zns; zns; ultraviolet photodetectors ... See more keywords
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Temperature-Dependent Crystallization of Ga2O3 for Ultraviolet Photodetectors

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Published in 2020 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-019-07924-x

Abstract: As an n-type oxide semiconductor, Ga2O3 shows great promise in solar-blind ultraviolet (UV) photodetectors due to its adequate band gap, high absorption coefficient, high thermal and chemical stability, high breakdown voltage, and high sensitivity to… read more here.

Keywords: microscopy; ga2o3; crystallization; ultraviolet photodetectors ... See more keywords
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Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces

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Published in 2017 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2017.02.139

Abstract: Abstract Highly antireflective heterostructured aluminum gallium nitride (AlGaN)/GaN ultraviolet (UV) photodetectors were demonstrated using a combination of inverted pyramidal surfaces and zinc oxide nanorod arrays (i.e., antireflective surface modification) to enhance the optical sensitivity. The… read more here.

Keywords: pyramidal surfaces; algan gan; inverted pyramidal; ultraviolet photodetectors ... See more keywords
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ZnO ultraviolet photodetectors with an extremely high detectivity and short response time

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Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.03.110

Abstract: Abstract ZnO thin films have been prepared by atomic layer deposition for ultraviolet photodetection with metal-semiconductor-metal (MSM) structure. The innovation of rapid thermal annealing treatment can modulate the carrier concentration of the ZnO thin films,… read more here.

Keywords: response; detectivity; photodetectors extremely; ultraviolet photodetectors ... See more keywords
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The high response organic ultraviolet photodetectors based on 2-TNATA as donor

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Published in 2017 at "Chinese Journal of Physics"

DOI: 10.1016/j.cjph.2016.12.009

Abstract: Abstract Organic ultraviolet photodetectors (OUV-PDs) were fabricated utilizing 2-TNATA as an electron donor with Bphen and TPBi as electron acceptors. A high sensitivity of OUV-PDs to UV light was obtained in the range of 300–420 nm.… read more here.

Keywords: organic ultraviolet; high response; ultraviolet photodetectors; ouv pds ... See more keywords
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Enhanced photocurrent of self-powered ultraviolet photodetectors based on Ba1−xSrxTiO3 ceramics via ferroelectric polarization

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Published in 2021 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2021.161177

Abstract: Abstract Research of photovoltaic energy conversion devices based on ferroelectric materials has received growing attention in recent years. However, the low photocurrent of the traditional ferroelectric ceramics is the key challenge for the development of… read more here.

Keywords: photocurrent self; self powered; powered ultraviolet; polarization ... See more keywords
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Gallium oxide solar-blind ultraviolet photodetectors: a review

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Published in 2019 at "Journal of Materials Chemistry C"

DOI: 10.1039/c9tc02055a

Abstract: This review introduces the developments in β-Ga2O3 materials growth and solar blind UV photodetectors in the last decade, summarizes their advantages and potential for improvement, and puts forward some suggestions for actual application requirements. read more here.

Keywords: oxide solar; blind; solar blind; gallium oxide ... See more keywords
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High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

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Published in 2017 at "Applied Physics Letters"

DOI: 10.1063/1.4986311

Abstract: We demonstrate high-performance ultraviolet photodetectors (UV-PDs) based on lattice-matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by transparent ITO films. Low dark currents of 6.8 × 10−8 and 6.1 × 10−7 A/mm and high photocurrent gains over four and three… read more here.

Keywords: based lattice; inaln algan; performance ultraviolet; ultraviolet photodetectors ... See more keywords
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High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes

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Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0022097

Abstract: Although a lot of promising two-dimensional (2D) semiconductors with various bandgaps, represented by black phosphorus (0.3 eV), transition metal dichalcogenides (< 2 eV), and boron nitride (5 − 6 eV), have been extensively researched in photoelectronic and electronic devices, the… read more here.

Keywords: photodetectors based; ultraviolet; ultraviolet photodetectors; speed ultraviolet ... See more keywords
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Solution-processed, fullerene-free organic ultraviolet photodetectors using thermally activated delayed fluorescence materials as electron acceptor

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Published in 2018 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/aae958

Abstract: Solution-processed organic ultraviolet photodetectors (UV-PDs) have been investigated for many years due to their mechanical flexibility and the potential for large-scale roll-to-roll processability. Fullerene derivatives are the most widely used electron acceptors in solution-processed photodetectors.… read more here.

Keywords: solution processed; organic ultraviolet; thermally activated; ultraviolet ... See more keywords
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A distinctive architecture design of lateral p–n type GaN ultraviolet photodetectors via a numerical simulation

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Published in 2023 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/acd460

Abstract: The conventionally vertical p–n type gallium nitride (GaN)-based ultraviolet (UV) photodetectors (PDs) suffer from the drawbacks of insufficient light absorption in the depletion region, thus resulting in poor carrier separation efficiency. The architecture of lateral… read more here.

Keywords: type gan; lateral type; design; architecture ... See more keywords