A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
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DOI: 10.1109/lmwc.2018.2871336
Abstract: This letter presents a 1 to >110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells are realized with inductive peaking at the output and match the phase… read more here.
Keywords: wave amplifier; output; technology; ultrawideband traveling ... See more keywords