A Quantitative Analytical Model of Paralleled SiC MOSFETs for Calculating Unbalanced Switching Currents and Energy
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DOI: 10.1109/tpel.2024.3448201
Abstract: Uneven dynamic currents between paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) can cause unbalanced switching losses, challenging the circuit reliability. Therefore, it is essential to quantitatively evaluate unbalanced dynamic currents during circuit design and… read more here.
Keywords: energy; switching currents; unbalanced switching; model ... See more keywords