Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates
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DOI: 10.1063/1.4993985
Abstract: High-performance blue GaN-based light-emitting diodes (LEDs) on Si substrates have been achieved by applying a suitable tensile stress in the underlying n-GaN. It is demonstrated by simulation that tensile stress in the underlying n-GaN alleviates… read more here.
Keywords: gan based; underlying gan; stress; tensile stress ... See more keywords