Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films
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DOI: 10.3390/ma15062097
Abstract: In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved… read more here.
Keywords: ferroelectric characteristics; frequency; undoped hfo2; temperature ... See more keywords