Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.
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DOI: 10.1021/acsami.3c03294
Abstract: We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm relaxed Si0.2Ge0.8 shallow barrier. The bottom barrier contains Si0.2Ge0.8 (650 °C) and Si0.1Ge0.9 (800 °C) such that variation of… read more here.
Keywords: strained quantum; mobility; undoped strained; well ultrahigh ... See more keywords