Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.04.009
Abstract: Abstract The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. The variation of electrical characteristics of the uniaxial strained Si nanometer NMOSFET has… read more here.
Keywords: dose radiation; effect; uniaxial strained; total dose ... See more keywords
Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes
Sign Up to like & getrecommendations! Published in 2023 at "Physica Scripta"
DOI: 10.1088/1402-4896/accfcc
Abstract: Stress/strain engineering techniques are employed to boost the performance of Gate-all-around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm technology nodes and beyond. In this work, we report on the 3D numerical simulation… read more here.
Keywords: stress; stress strain; strain; strained sige ... See more keywords