Unintentional gallium incorporation in InGaN layers during epitaxial growth
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2016.11.026
Abstract: Abstract Unintentional gallium incorporation was observed and investigated in the epitaxial growth of InGaN by metalorganic vapor phase epitaxy. InGaN was grown without intentional gallium precursor and the gallium incorporation rate was found not dependent… read more here.
Keywords: source; gallium incorporation; gallium; incorporation ... See more keywords