Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with $${N}^{+}{-}{P}^{-}$$N+-P- junction
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DOI: 10.1007/s10825-018-1152-6
Abstract: We propose herein a new dual-gate metal–oxide–semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an $${N}^{+}$$N+ region on the source side… read more here.
Keywords: unipolar junction; field; mosfet; gate ... See more keywords