Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio
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DOI: 10.3390/ma10030322
Abstract: A metal–insulator–metal structure resistive switching device based on H0.5Z0.5O2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar… read more here.
Keywords: switching characteristics; high ratio; unipolar resistive; enhanced unipolar ... See more keywords