Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3
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DOI: 10.7567/1882-0786/ab08ad
Abstract: We report a plasma damage removal method for β-Ga2O3 devices using hot phosphoric acid solution. Sidewall Schottky diodes were fabricated on MOCVD-grown un-intentionally doped β-Ga2O3 films grown on (010)-oriented semi-insulating substrates. Removal of the plasma… read more here.
Keywords: ga2o3; doped ga2o3; near unity; unity ideality ... See more keywords