Augmentation and Assessment of a Universal FET ${I}$ –${V}$ Model for Simulating GaN HEMTs
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DOI: 10.1109/ted.2020.2966546
Abstract: The ON-state ${I}$ – ${V}$ characteristics of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are affected by the bias dependencies of four parameters, namely—virtual gate length, mobility, saturation velocity, and the channel-length modulation (CLM) parameter—this is… read more here.
Keywords: assessment universal; model simulating; fet model; model ... See more keywords