Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs
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DOI: 10.1088/1361-6641/ad4a2d
Abstract: In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit… read more here.
Keywords: layer; double channel; inaln; upper channel ... See more keywords