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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

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0 Published in 2019 at "Nature Communications"

DOI: 10.1038/s41467-019-12353-9

Abstract: The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy… read more here.

Keywords: iii; optoelectronic devices; uprooting defects; defects enable ... See more keywords