Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node
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DOI: 10.1109/tns.2016.2636338
Abstract: Single-event upsets are studied in digital storage cells in 130nm CMOS bulk Si and PDSOI technologies. The sensitivity of SEU to different technologies and hardening approaches is explored by using heavy-ion radiation experiments. Error numbers… read more here.
Keywords: pdsoi; technology; single event; technology node ... See more keywords