Use of Si KLL Auger shifts and the Auger parameter in XPS to distinguish Ti silicides from a Ti/Si mixture in thin films
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DOI: 10.1016/j.elspec.2019.04.004
Abstract: Abstract A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties. It is difficult, however, to… read more here.
Keywords: use kll; shifts auger; kll auger; auger parameter ... See more keywords