Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis
Sign Up to like & getrecommendations! Published in 2019 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2018.12.017
Abstract: Abstract By using Au as the gate metal contact, performance of NO2-doped H-diamond field effect transistor (FET) has been improved. We fabricated and compared Al2O3 layer deposited, NO2-doped H-diamond FETs with Au, Al and Ti… read more here.
Keywords: metal; fet; using gate; mos ... See more keywords
BEBIG 60Co HDR brachytherapy source dosimetric parameters validation using GATE Geant4-based simulation code
Sign Up to like & getrecommendations! Published in 2022 at "Heliyon"
DOI: 10.1016/j.heliyon.2022.e09168
Abstract: Purpose This study aims to validate the dosimetric characteristics of High Dose Rate (HDR) 60Co source (Co0.A86 model) using GATE Geant4-based Monte Carlo code. According to the recommendation of the American Association of Physicists in… read more here.
Keywords: using gate; gate; source; geant4 based ... See more keywords
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2953589
Abstract: Short-circuit (SC) capability is a critical requirement for power switches in modern power electronics applications. A tradeoff between on-state voltage drop, switching loss, and SC capability of insulated gate bipolar transistors (IGBTs) is performed by… read more here.
Keywords: capability; using gate; circuit capability; short circuit ... See more keywords