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Published in 2021 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2020.3037892
Abstract: A 28.8-GB/s 96-MB 3D-stacked SRAM is presented. A total of eight SRAM dies, designed in a 40-nm CMOS process, are vertically stacked and connected using an inductive coupling wireless link with a low-voltage NMOS push-pull…
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Keywords:
inductive coupling;
coupling;
stacked sram;
using inductive ... See more keywords