Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.08.021
Abstract: Abstract Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and… read more here.
Keywords: positron; monoenergetic positron; type defects; using monoenergetic ... See more keywords