Measuring Spatially-Resolved Potential Drops at Semiconductor Hetero-Interfaces Using 4D-STEM.
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DOI: 10.1002/smtd.202300453
Abstract: Characterizing long-range electric fields and built-in potentials in functional materials at nano to micrometer scales is of supreme importance for optimizing devices, e.g., the functionality of semiconductor hetero-structures or battery materials is determined by the… read more here.
Keywords: hetero; using stem; hetero interfaces; semiconductor hetero ... See more keywords