MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
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DOI: 10.1063/5.0031484
Abstract: We report on the growth of β-Ga2O3 thin films using trimethylgallium (TMGa) as a source for gallium and pure O2 for oxidation. The growth rate of the films was found to linearly increase with the… read more here.
Keywords: using trimethylgallium; purity; films using; growth ... See more keywords