First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2756061
Abstract: High quality ultrathin body (UTB)-Ge-on-insulator (GeOI) substrates have been fabricated with advanced layer transfer technology called HEtero-Layer-Lift-Off. With precise control of interfacial qualities, Ge crystallinity and thickness fluctuation in GeOI substrates, electron mobility of UTB-GeOI… read more here.
Keywords: geoi; mobility; mobility enhancement; utb geoi ... See more keywords