Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics
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DOI: 10.1063/1.5041501
Abstract: Effects of carbon impurities and oxygen vacancies in Al2O3 film on the characteristics of Al2O3/GaN MOS capacitors were studied using the different atomic layer deposition (ALD) precursor and high-pressure water vapor annealing (HPWVA). Trimethyl aluminum… read more here.
Keywords: vacancies al2o3; carbon; al2o3 film; oxygen vacancies ... See more keywords