Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations
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DOI: 10.1002/er.6744
Abstract: Gallium nitride (GaN) is a promising semiconductor material for the application of the high power electronic, optoelectronic, laser diodes, etc. The previous works have been focused on the electronic and optical properties of the monolayer… read more here.
Keywords: electronic optical; bulk gan; vacancy electronic; properties bulk ... See more keywords