Significant growth of vacancy-type defects by post-irradiation annealing in neon ion-irradiated tungsten probed by a slow positron beam
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Nuclear Materials"
DOI: 10.1016/j.jnucmat.2020.152018
Abstract: Abstract Irradiation damage and its evolution in noble gas ion-irradiated tungsten have not been investigated in detail other than in the case of helium ion irradiation. In this study, irradiation-induced vacancy-type defects in helium ion-… read more here.
Keywords: irradiation; vacancy type; ion; ion irradiated ... See more keywords
Stability of vacancy-type defect clusters in Ni based on first-principles and molecular dynamics simulations☆
Sign Up to like & getrecommendations! Published in 2018 at "Scripta Materialia"
DOI: 10.1016/j.scriptamat.2017.10.003
Abstract: Abstract Using first-principles calculations based on density-functional theory, the energetics of different vacancy-type defects, including voids, stacking fault tetrahedra (SFT) and vacancy loops, in Ni are investigated. It is found that voids are more stable… read more here.
Keywords: molecular dynamics; vacancy; stability vacancy; vacancy type ... See more keywords
Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.08.021
Abstract: Abstract Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and… read more here.
Keywords: positron; monoenergetic positron; type defects; using monoenergetic ... See more keywords
Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation
Sign Up to like & getrecommendations! Published in 2017 at "Defect and Diffusion Forum"
DOI: 10.4028/www.scientific.net/ddf.373.183
Abstract: Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active… read more here.
Keywords: annihilation; type defects; defects gan; vacancy ... See more keywords