An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.
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DOI: 10.1021/acsnano.2c12575
Abstract: In valence change memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurately simulating the switching dynamics of these devices can… read more here.
Keywords: change; change memory; valence change; field induced ... See more keywords
Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
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DOI: 10.1063/1.5026063
Abstract: The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change of the metal cations. However, direct experimental proofs of valence… read more here.
Keywords: valence change; valence; hard ray; spectroscopy ... See more keywords
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2022.3160304
Abstract: Memristors are promising nanoelectronic devices for the implementation of future AI-driven sensor-processor electronic systems, which are essential for the ongoing digitalization of our world. Accurate and computationally cost-effective models for the manufactured memristors are essential… read more here.
Keywords: physics; memristor; change mechanism; model ... See more keywords