Engineering Ge Profiles in Si/SiGe Heterostructures for Increased Valley Splitting
Sign Up to like & getrecommendations! Published in 2025 at "Nano Letters"
DOI: 10.1021/acs.nanolett.5c02848
Abstract: Electron-spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction-band valleys. While sharp quantum-well interfaces are pursued to increase the valley-splitting energy deterministically, here we explore an… read more here.
Keywords: valley splitting; engineering profiles; valley; sige heterostructures ... See more keywords
Wide Electrical Tunability of the Valley Splitting in a Doubly Gated Silicon-on-Insulator Quantum Well.
Sign Up to like & getrecommendations! Published in 2025 at "Nano letters"
DOI: 10.1021/acs.nanolett.5c03049
Abstract: The valley splitting of 2D electrons in doubly gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO2 interface, the valley splitting increases as a function… read more here.
Keywords: valley splitting; silicon insulator; valley; gated silicon ... See more keywords
Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field.
Sign Up to like & getrecommendations! Published in 2017 at "Nature nanotechnology"
DOI: 10.1038/nnano.2017.68
Abstract: Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition-metal dichalcogenide (TMDC) with a broken inversion symmetry possesses two degenerate yet inequivalent valleys, which… read more here.
Keywords: field; valley splitting; enhanced valley; exchange field ... See more keywords
Valley splitting correlations across a silicon quantum well containing germanium.
Sign Up to like & getrecommendations! Published in 2025 at "Nature communications"
DOI: 10.1038/s41467-025-67325-z
Abstract: Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to… read more here.
Keywords: quantum well; valley splitting; silicon quantum; device ... See more keywords
Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c6nr05710a
Abstract: In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenide monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed on the monolayer… read more here.
Keywords: splitting transition; valley splitting; transition metal; valley ... See more keywords
Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS2 by proximity coupling with a ferromagnetic MnO2 monolayer.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr03315g
Abstract: Two-dimensional (2D) valleytronic systems can provide information storage and processing advantages that complement or surpass those of conventional charge and spin-based semiconductor technologies. For efficient use of the valley degree of freedom, the major challenge… read more here.
Keywords: monolayer; proximity coupling; hole; valley splitting ... See more keywords
Nonvolatile electrical control of valley splitting by ferroelectric polarization switching in a two-dimensional AgBiP2S6/CrBr3 multiferroic heterostructure.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr04956b
Abstract: The generation and controllability of valley splitting are the major challenge in effectively utilizing valley degrees of freedom in valleytronics. Using first-principles calculations, we propose a novel multiferroic system, a AgBiP2S6/CrBr3 van der Waals heterostructure,… read more here.
Keywords: valley; nonvolatile electrical; agbip2s6 crbr3; electrical control ... See more keywords
Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP2S6 by magnetic doping: towards electron valley-polarized transport
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d2ra01697d
Abstract: Two-dimensional valleytronic systems, using the valley index of carriers to perform logic operations, serves as the basis of the next-generation information technologies. For efficient use of the valley degree of freedom, the major challenge currently… read more here.
Keywords: conduction band; valley splitting; band edge; valley ... See more keywords
Mechanisms of manipulating valley splitting in MoTe2/MnS2 van der Waals heterostructure by electric field and strains
Sign Up to like & getrecommendations! Published in 2024 at "RSC Advances"
DOI: 10.1039/d4ra01013b
Abstract: In this study, we discuss the tunability of valley splitting using first-principles calculations with a monolayer MoTe2 and layered ferromagnetic MnS2 heterostructure as an example. We observe that, due to the magnetic proximity effect (MPE)… read more here.
Keywords: electric field; valley splitting; monolayer mote2; mns2 ... See more keywords
Induced valley splitting in monolayer MoS2 by an antiferromagnetic insulating CoO(111) substrate
Sign Up to like & getrecommendations! Published in 2018 at "Physical Review B"
DOI: 10.1103/physrevb.98.235419
Abstract: The valleytronic properties in monolayer $\mathrm{Mo}{\mathrm{S}}_{2}$ induced by the magnetic proximity effect of an antiferromagnetic CoO(111) substrate have been investigated using density functional theory and Berry curvature calculations. The results show that monolayer $\mathrm{Mo}{\mathrm{S}}_{2}$ can… read more here.
Keywords: 111 substrate; valley splitting; mathrm; coo 111 ... See more keywords