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Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00163-z
Abstract: In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D…
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Keywords:
variability wfv;
variability;
work function;
electrical parameters ... See more keywords