Fin Angle Variation Oriented Threshold Voltage Model for a FDSOI FinFET
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DOI: 10.1080/03772063.2019.1620646
Abstract: To support the current level of integration beyond 22 nm, the FinFET architecture is introduced with the expectation of greater levels of device matching. An additional mechanism, arising from char... read more here.
Keywords: angle variation; voltage model; threshold voltage; variation oriented ... See more keywords