The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations
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DOI: 10.1155/2020/3698543
Abstract: B-doped hydrogenated amorphous silicon (a-Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique. After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the… read more here.
Keywords: doping concentrations; various doping; films various; transport properties ... See more keywords