Moisture barrier properties of low-temperature atomic layer deposited Al2O3 using various oxidants
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DOI: 10.1016/j.ceramint.2019.06.156
Abstract: Abstract In this study, the growth characteristics and film properties of the atomic layer deposition (ALD) of Al2O3 are systemically identified using various oxidants (i.e., H2O, H2O2, CH3COOH, and O3). Among these reactants, ALD Al2O3… read more here.
Keywords: various oxidants; ald al2o3; temperature; low temperature ... See more keywords