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Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/10/104001
Abstract: We propose a reliable asymmetric dual-k spacer with SiC source/drain (S/D) pocket as a stressor for a Si channel. This enhances the device performance in terms of electron mobility (eMobility), current driving capabilities, transconductance (Gm)…
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Keywords:
impact varying;
varying carbon;
dual spacer;
asymmetric dual ... See more keywords