A Novel Low On−State Resistance Si/4H−SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero−Transfer Mechanism
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13050778
Abstract: In this study, we propose a novel silicon (Si)/silicon carbide (4H−SiC) heterojunction vertical double−diffused MOSFET with an electron tunneling layer (ETL) (HT−VDMOS), which improves the specific on−state resistance (RON), and examine the hetero−transfer mechanism by… read more here.
Keywords: vdmos; electron tunneling; resistance; sic heterojunction ... See more keywords
Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14051074
Abstract: The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate… read more here.
Keywords: vdmos; mev cm2; ctsj sic; sic vdmos ... See more keywords