Geometric and anisotropy effects on voltage driven magnetic switching behaviors in nanoscale multiferroic heterostructure
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DOI: 10.1063/1.5089780
Abstract: Voltage driven magnetic switching (VDMS) in multiferroic heterostructure is highly demanded for next generation energy efficient high-density memory (e.g. magnetoelectric random access memory) and spintronic devices. For practical applications in large scale integrated device, it… read more here.
Keywords: multiferroic heterostructure; voltage driven; vdms; field ... See more keywords