Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant
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DOI: 10.3390/ma15196918
Abstract: We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge… read more here.
Keywords: versus si1; etching versus; selective etching; si1 xgex ... See more keywords