Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions
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DOI: 10.1007/s10854-024-12707-0
Abstract: In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with… read more here.
Keywords: pmitz sio2; vertical diodes; comparison vertical; diodes based ... See more keywords