High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
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DOI: 10.1109/led.2017.2670925
Abstract: This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers are needed, while no material regrowth or p-GaN layer… read more here.
Keywords: gan substrates; gan vertical; vertical fin; bulk gan ... See more keywords