Wafer-Scale Vertical 1D GaN Nanorods/2D MoS2/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors
Sign Up to like & getrecommendations! Published in 2024 at "Nano-Micro Letters"
DOI: 10.1007/s40820-024-01553-8
Abstract: Vertical 1D GaN nanorod arrays/2D MoS2/PEDOT:PSS heterostructures in wafer scale have been fabricated for flexible photodetection firstly. Self-powered flexible photodetector at compressive strain reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W−1… read more here.
Keywords: vertical gan; mos2 pedot; powered flexible; self powered ... See more keywords
Exploration of gate trench module for vertical GaN devices
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113828
Abstract: Abstract The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices: we considered the impact of cleaning process of the etched surface of the… read more here.
Keywords: gan devices; gate trench; gate; trench module ... See more keywords
Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106820
Abstract: Abstract In this study, the effect of p-NiO guard ring length on the properties of vertical GaN Schottky barrier diode was investigated extensively. The forward biased current-voltage characteristics of all diodes with different guard ring… read more here.
Keywords: gan schottky; nio guard; guard ring; schottky barrier ... See more keywords
Vertical GaN MISFET for chip‐on‐chip high speed laser driving applications
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2020.0896
Abstract: In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad area distributed Bragg reflector diode laser. The intention of this work had been… read more here.
Keywords: chip chip; gan misfet; chip; vertical gan ... See more keywords
Post-trench restoration for vertical GaN power devices
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0191454
Abstract: The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the… read more here.
Keywords: post trench; vertical gan; gan power; trench restoration ... See more keywords
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2963902
Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after… read more here.
Keywords: gan gan; grown regrown; gan; gan schottky ... See more keywords
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3014133
Abstract: Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. Devices with different FMR geometries were investigated including various numbers of rings and… read more here.
Keywords: metal; gan schottky; floating metal; schottky barrier ... See more keywords
kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3523681
Abstract: This work investigates the proton irradiation effect on a kV-class vertical GaN-on-GaN PiN diode under 10-MeV and 50-MeV proton irradiation with fluence up to $1\times 10^{{14}}$ cm−2. After proton irradiation, the vertical GaN PiN diode… read more here.
Keywords: gan pin; vertical gan; irradiation; proton irradiation ... See more keywords
Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2824985
Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.
Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3083239
Abstract: Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive… read more here.
Keywords: power devices; fabrication; power; gan power ... See more keywords
Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3579442
Abstract: This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ultrahigh-pressure annealing (UHPA). We performed a technology computer-aided design (TCAD)… read more here.
Keywords: jbs; vertical gan; gan junction; implantation ... See more keywords