Exploration of gate trench module for vertical GaN devices
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113828
Abstract: Abstract The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices: we considered the impact of cleaning process of the etched surface of the… read more here.
Keywords: gan devices; gate trench; gate; trench module ... See more keywords
Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106820
Abstract: Abstract In this study, the effect of p-NiO guard ring length on the properties of vertical GaN Schottky barrier diode was investigated extensively. The forward biased current-voltage characteristics of all diodes with different guard ring… read more here.
Keywords: gan schottky; nio guard; guard ring; schottky barrier ... See more keywords
Vertical GaN MISFET for chip‐on‐chip high speed laser driving applications
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2020.0896
Abstract: In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad area distributed Bragg reflector diode laser. The intention of this work had been… read more here.
Keywords: chip chip; gan misfet; chip; vertical gan ... See more keywords
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2963902
Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after… read more here.
Keywords: gan gan; grown regrown; gan; gan schottky ... See more keywords
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3014133
Abstract: Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. Devices with different FMR geometries were investigated including various numbers of rings and… read more here.
Keywords: metal; gan schottky; floating metal; schottky barrier ... See more keywords
Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2824985
Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.
Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3083239
Abstract: Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive… read more here.
Keywords: power devices; fabrication; power; gan power ... See more keywords
Hard-switching reliability studies of 1200 V vertical GaN PiN diodes
Sign Up to like & getrecommendations! Published in 2018 at "MRS Communications"
DOI: 10.1557/mrc.2018.204
Abstract: We report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by… read more here.
Keywords: gan pin; pin diodes; reliability; vertical gan ... See more keywords
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Sign Up to like & getrecommendations! Published in 2020 at "Micromachines"
DOI: 10.3390/mi11050519
Abstract: Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science… read more here.
Keywords: gan schottky; radiation sensors; gan gan; particle ... See more keywords
Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Express"
DOI: 10.7567/apex.10.121002
Abstract: In this paper, we report on a vertical GaN trench MOS barrier Schottky (TMBS) rectifier for attaining low leakage current at high temperature and high reverse voltage. At 200 °C, a high blocking voltage of… read more here.
Keywords: voltage; vertical gan; blocking voltage; gan trench ... See more keywords